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this is information on a product in full production. may 2012 doc id 018960 rev 4 1/12 12 STFI13NM60N n-channel 600 v, 0.28 , 11 a mdmesh? ii power mosfet in i2pakfp package datasheet ? production data features fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d p tot STFI13NM60N 650 v < 0.36 11 a 25 w 1 2 3 i2pakfp (to-281) 3# $ ' 3 table 1. device summary order codes marking packages packaging STFI13NM60N 13nm60n i 2 pakfp (to-281) tu b e www.st.com
contents STFI13NM60N 2/12 doc id 018960 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STFI13NM60N electrical ratings doc id 018960 rev 4 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 44 (1) a p tot total dissipation at t c = 25 c 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i as repetitive or non repetitive avalanche current 3.5 (1) 1. limited by maximum junction temperature. a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj
electrical characteristics STFI13NM60N 4/12 doc id 018960 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 14 ) - 30 4 15 - nc nc nc r g gate input resistance f=1 mhz, i d = 0 3 4.7 6 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 v gs = 10 v (see figure 13 ) - 3 8 30 10 - ns ns ns ns
STFI13NM60N electrical characteristics doc id 018960 rev 4 5/12 table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 15 ) - 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 15 ) - 290 190 17 ns c a
electrical characteristics STFI13NM60N 6/12 doc id 018960 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v i d 12 10 2 0 0 10 v d s (v) 20 (a) 5 15 25 20 v g s =10v 4 6 8 14 16 1 8 22 4v 5v 6v am0 33 00v1 i d 0 0 4 v g s (v) 8 (a) 2 6 10 12 10 2 20 4 6 8 14 16 1 8 22 v d s =20v am0 33 01v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 r d s (on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ) 2 6 0.2 8 0. 3 0 v g s =10v 8 10 am0 33 02v1
STFI13NM60N electrical characteristics doc id 018960 rev 4 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =4 8 0v i d =11a 3 0 12 3 00 200 100 0 400 500 v d s v d s (v) am0 33 05v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 33 04v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 33 06v1 r d s (on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.7 1.5 1. 3 1.9 2.1 i d =5.5a v g s =10v am0 33 07v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =25c t j =150c am09290v1
test circuits STFI13NM60N 8/12 doc id 018960 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STFI13NM60N package mechanical data doc id 018960 rev 4 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STFI13NM60N 10/12 doc id 018960 rev 4 figure 19. i 2 pakfp (to-281) drawing table 9. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 8 291506 rev.a
STFI13NM60N revision history doc id 018960 rev 4 11/12 5 revision history table 10. document revision history date revision changes 21-jun-2011 1 first release. 03-nov-2011 2 figure 2: safe operating area and figure 3: thermal impedance have been added. 20-mar-2012 3 document status promoted from preliminary data to production data. package name has been updated. 15-may-2012 4 r g values have been modified in table 6: dynamic
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